Correction: Antioxidant properties of ALD grown nanoceria films with tunable valency
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Barrier Properties of ALD W1.5N Thin Films
W1.5N films grown by ALD from WF6, NH3, C2H4 and SiH4 as precursors were tested as Cu diffusion barriers in p/n diodes and capacitors with SiO2 as a dielectric. I-V and C-V, C-t characteristics were measured before and after anneal. The layers exhibit excellent barrier properties against both Cu and Al interaction with silicon. No changes of current and capacitance attributed to a barrier failu...
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Hafnium silicate films with pure HfO2 and SiO2 samples as references were fabricated by atomic layer deposition (ALD) in this work. The optical properties of the films as a function of the film composition were measured by vacuum ultraviolet (VUV) ellipsometer in the energy range of 0.6 to 8.5 eV, and they were investigated systematically based on the Gaussian dispersion model. Experimental res...
متن کاملNanotribological properties of ALD-processed bilayer TiO2/ZnO films
TiO2/ZnO films grown by atomic layer deposition (ALD) demonstrated nanotribological behaviors using scratch testing. TEM profiles obtained an amorphous structure TiO2 and nanocrystalline structure ZnO, whereas the sample has significant interface between the TiO2/ZnO films. The experimental results show the relative XRD peak intensities are mainly contributed by a wurtzite oxide ZnO structure a...
متن کاملarchitecture and engineering of nanoscale sculptured thin films and determination of their properties
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15 صفحه اولMicromechanical characterization of ALD thin films
Aalto University, P.O. Box 11000, FI-00076 Aalto www.aalto.fi Author Maria Berdova Name of the doctoral dissertation Micromechanical characterization of ALD thin films Publisher School of Chemical Technology Unit Materials Science and Engineering Series Aalto University publication series DOCTORAL DISSERTATIONS 119/2015 Field of research Microelectromechanical systems Manuscript submitted 31 Au...
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ژورنال
عنوان ژورنال: Biomaterials Science
سال: 2019
ISSN: 2047-4830,2047-4849
DOI: 10.1039/c9bm90034a